tsm2307 sot - 23 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm2307cx rf sot - 23 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds - 30 v gate - source voltage v gs ?0 v continuous drain current i d - 3 a pulsed drain current i dm - 20 a continuous source current (diode conduc tion) a,b i s - 1.7 a ta = 25 o c 1.25 maximum power dissipation ta = 75 o c p d 0.8 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junc tion to case thermal resistance r ? jf 75 o c/w junction to ambient thermal resistance (pcb mounted) r ? ja 1 30 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v ds (v) r ds(on) (m ) i d (a) 80 @ v gs = - 10v - 3 - 30 140 @ v gs = - 4.5v - 2 pin definition : 1. gate 2. source 3. drain block diagram p - channel mosfet product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical specifications ( ta = 25 o c unless otherwise note d ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = - 250ua bv dss - 3 0 -- -- v gate threshold voltage v ds = v gs , i d = - 250 a v gs(th) - 1 -- - 3 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na ze ro gate voltage drain current v ds = - 30v, v gs = 0v i dss -- -- - 1.0 a on - state drain current a v ds - 5v, v gs = - 10v i d(on) - 6 -- -- a v gs = - 10v, i d = - 3.0a -- 64 80 drain - source on - state resistance a v gs = - 4.5v, i d = - 2.0a r ds(on) -- 103 140 m forward transconductance a v ds = - 1 5 v, i d = - 3 a g fs -- 5 -- s diode forward voltage i s = - 1.7a, v gs = 0v v sd -- -- - 1.2 v dynamic b total gate charge q g -- 10 15 gate - source charge q gs -- 1.9 -- gate - drain charge v ds = - 15v, i d = - 3a, v gs = - 10v q gd -- 2 -- nc input capacitance c iss -- 565 -- output capacit ance c oss -- 126 -- reverse transfer capacitance v ds = - 15v, v gs = 0v, f = 1.0mhz c rss -- 75 -- pf switching c turn - on delay time t d(on) -- 10 20 turn - on rise time t r -- 9 20 turn - off delay time t d(off) -- 27 50 turn - off fall time v dd = - 15 v, r l = 15 , i d = - 1a, v gen = - 10 v, r g = 6 t f -- 7 16 ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to prod uction testing. b. switching time is essentially independent of operating temperature. tsm2307 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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